Tip width characterizer with an array of 5 lines, line width varying from 50 nm to 130 nm in steps of 20 nm.
Designed in collaboration with Physikalisch Technische Bundesanstalt, Braunschweig, Germany.
| Material | Silicon |
| Width of line | increasing from 50 nm to 130 nm in steps of 20 nm actual linewidth is delivered for each chip |
| Pitch | 500 nm ± 10nm |
| Depth of line | ~ 1 µm |
| Surface/sidewall angle | < 90° ± 0,5° |
| Sidewall parallelity | < 1° |
| Top corner radius | < 10 nm |
