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| Item | Detailed Specifications |
|---|---|
| Nominal thickness | 5, 10, 15, 20, 25 nm |
| Substrate | SiO2(2 nm) / Si(100) wafer |
| Film deposition | Atomic Layer Deposition |
| Certification method | Mutual calibration with TEM and MEIS |
| Traceability | Silicon lattice constant measured by TEM |